Solar-Tectic LLC announced that a patent application for a method of making III-V thin-film tandem solar cells with high performance has been allowed by the US Patent and Trademark Office. The patent, the first ever for a thin III-V layer on crystalline silicon thin-film, covers group III-V elements such as Gallium Arsenide (GaAs), and Indium Gallium Phosphide (InGaP), for the top layer, as well as all inorganic materials, including, silicon, germanium, etc., for the bottom layer.
III-V tandem (or multi-junction) cells built on wafers such as silicon are currently being developed in labs, with high efficiencies of around ~30%. The highest dual-junction cell efficiency (32.8%) came from a tandem cell that stacked a layer of gallium arsenide (GaAs) atop crystalline silicon. Manufacturing costs are expensive especially if a germanium wafer is used as the bottom material in the two layer tandem structure.
Importantly, the entire patented process for the Solar-Tectic III-V tandem cell can be environmentally friendly since non-toxic metals can be used to deposit the crystalline thin-film materials for both the bottom layer in the tandem configuration as well as in the top, III-V, layer.
The technology also has great promise for LED manufacturing using for example Gallium Nitride.
A “Tandem Series” of solar cell technologies has been launched by Solar-Tectic LLC, which includes a variety of different proven semiconductor photovoltaic materials for the top layer on silicon and/or germanium bottom layers. Recently patents for a tin perovskite and germanium perovskite thin-film tandem solar cell were also granted.
The ITC ruling on September 22 means that it is likely that tariffs will be imposed on crystalline silicon wafers sold in the US. These tariffs will not apply to thin-film solar cell technology, such as ST’s.
Image credit: By La2O3 – Own work, CC BY-SA 3.0, https://commons.wikimedia.org/w/index.php?curid=33492423